THIN LAM is a thin laminate designed for high thermal dissipation applications, with thermal conductivity ranging between 2.2 and 3.2 W/mK. This laminate can be bent after component insertion in order to achieve three-dimensional shapes with the PCB board. THIN LAM is the ideal replacement for FR4 thin laminates when thermal release is required. Double side Cu-clad thin laminate is built on the basis of thermal conductive polymeric-ceramic glass reinforced prepreg. It is mainly intended to produce double side PCB, for later bonding to a metal heat spreader by means of one sheet of B-stage.
Thermal Impedance | 0,37/0,75 Kcm²/W |
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Resistance to Thermal Shocks | High |
Thermal Conductivity | 2,2 W/mK |
Effective Heat Dissipation | Yes |
Dielectric Breakdown Voltage, AC | ≥3/≥6 kV |
Dielectric Layer | 1520μm |
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Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 1270μm |
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Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 1000μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 760μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 710μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 600μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 500μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 450μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 400μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 380μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
Dielectric Layer | 300μm |
---|---|
Thermal Conductivity | 3,2 W/kV |
Brakedown Voltage V(AC) | 50 kV/mm |
Ideal for high temperature | High |
Dielectric Strength | Excellent |
Bond to a Metal Heat Sink | Yes |
Resistance to Thermal Shocks | Yes |
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